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Strain relaxation caused by defects in InGaN-based multiple-quantum-well near-ultraviolet light-emitting diodes investigated by macroscopic characterization
- 제목
- Strain relaxation caused by defects in InGaN-based multiple-quantum-well near-ultraviolet light-emitting diodes investigated by macroscopic characterization
- 저자
- 신동수
- 발행일
- 2020-02-06
- 학회명
- SPIE Photonics West 2020
- 개최지
- San Francisco, USA