Silicon oxide film deposited at room temperatures using high-working-pressure plasma-enhanced chemical vapor deposition: Effect of O2 flow rate

초록

Silicon oxide films were deposited by high-working-pressure plasma-enhanced chemical vapor deposition using hexamethyldisiloxane and O2/He plasma as the precursor and the reactant, respectively. As the O2 flow rate increased during the process, the plasma density of O2 and He decreased due to reduction in the partial pressure of He, which affected the composition of O/Si in the silicon oxide films. Consequently, we found out that the compositional ratio of SiO2/SiO could be modulated by O2 flow conditions during the high-working-pressure plasma-enhanced chemical vapor deposition process. Additionally, it was observed that the water vapor transmission rate reduced with an increase in the O2 flow rate because of a compositional change in the silicon oxide films. © 2017 Elsevier Ltd and Techna Group S.r.l.

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