상세 보기
Carrier overflow in InGaN/GaN light-emitting diodes investigated by temperature-dependent short-circuit current characteristics
- Youn, Dong-Kuk;
- Lee, Gyeong Won;
- Shim, Jong In;
- Shin, Dong Soo
Citations
SCOPUS
0초록
The temperature dependence of the short-circuit current in the InGaN/GaN multiple-quantum-well light-emitting diode is investigated. From the experiments, we demonstrate that the carrier overflow to the p-GaN clad occurs more severely with decreasing temperature, resembling the behavior of the efficiency droop and the open-circuit voltage. © 2015 IEEE.
키워드
Gallium nitride; III-V semiconductors; Light; Light emitting diodes; Open circuit voltage; Quantum well lasers; Temperature distribution; Timing circuits; Efficiency droops; InGaN/GaN; InGaN/GaN multiple quantum well light emitting diodes; Temperature dependence; Temperature dependent; Semiconductor quantum wells
- 제목
- Carrier overflow in InGaN/GaN light-emitting diodes investigated by temperature-dependent short-circuit current characteristics
- 저자
- Youn, Dong-Kuk; Lee, Gyeong Won; Shim, Jong In; Shin, Dong Soo
- 발행일
- 2016-00
- 유형
- Conference Paper
- 저널명
- 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
- 권
- 2
- 페이지
- 1 ~ 2
- 언어
- ENG
- 출판사
- Institute of Electrical and Electronics Engineers Inc.
- 발행국가
- 미국
- 분량
- 2 페이지