Nanoscale Resistive Switching Memory Device Composed of NiO Nanodot and Graphene Nanoribbon Nanogap Electrodes

초록

We report a nanoscale resistive random access memory (RRAM) device consisting of a NiO nanodot and graphene nanoribbon (GNR) nanogap electrodes. The GNR nanogap was established by an electroburning process induced by applying voltage ramp stress between the two ends of the GNR. A NiO nanodot was then deposited between the nanogapped GNR electrodes by an elaborately controllable dip pen lithography method using a nickel carbonate [Ni2 (CO3)(OH)2] solution. The nanoscale GNR/NiO/GNR RRAM device exhibited reliable unipolar resistive switching characteristics with low SET/RESET voltages and currents, which might be the result of its miniaturized size and well-defined Ohmic contacts between the NiO nanodot and GNR electrodes.

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