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Importance of the radiative recombination rate to efficiency droop in InGaN-based light-emitting diodes
- Shim, Jong-In;
- Kim, Hyunsung;
- Shin, Dong Soo
Citations
SCOPUS
0초록
Experimental efficiency droop phenomena have been consistently explained by the saturation of the radiative recombination rate in InGaN quantum well at low current and subsequent increase in the nonradiative recombination rates at high current. ? OSA 2014
키워드
Efficiency; Gallium alloys; III-V semiconductors; Indium alloys; Light emitting diodes; Semiconductor alloys; Semiconductor quantum wells; Efficiency droops; High currents; InGaN quantum wells; Low currents; Nonradiative recombination rates; Radiative recombination rate; Photonics
- 제목
- Importance of the radiative recombination rate to efficiency droop in InGaN-based light-emitting diodes
- 저자
- Shim, Jong-In; Kim, Hyunsung; Shin, Dong Soo
- 발행일
- 2014-11
- 유형
- Conference Paper
- 저널명
- Asia Communications and Photonics Conference, ACP
- 페이지
- 1 ~ 3
- 언어
- ENG
- 분량
- 3 페이지
- ISSN
- P 2162-108X