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High-performance metal-oxide semiconductor based optoelectronics
- Kim, Jaehyun;
- Kwon, Sung Min;
- Jo, Jeong-Wan;
- Jo, Chanho;
- Kim, Jaekyun;
- 외 3명
Citations
SCOPUS
0초록
We investigated high-performance amorphous metal-oxide semiconductor based optoelectronics using low-temperature and solution process technologies. In particular, metal-oxide and quantum dots hybrid phototransistors exhibited ultra-high photodetectivity up to 4x1017 Jones in a broad range of detection wavelength from ultraviolet to infrared ranges. In addition, we employed artificial visual perception circuit based on metal-oxide synaptic transistors with metal chalcogenide semiconductors for optoelectronic neuromorphic devices. We also demonstrated large-scaled ultra-flexible and stretchable device showing promising next-generation wearable optoelectronics. © 2020 SID.
키워드
Amorphous metal-oxide semiconductor; Flexible/stretchable electronics; Neuromorphic devices; Optoelectronics; Phototransistors; Dielectric devices; Metallic compounds; MOS devices; Oxide semiconductors; Semiconductor quantum dots; Temperature; Transistors; Amorphous metals; Detection wavelengths; Infrared range; Low temperatures; Metal chalcogenide; Metal oxide semiconductor; Solution process; Visual perception; Metals
- 제목
- High-performance metal-oxide semiconductor based optoelectronics
- 저자
- Kim, Jaehyun; Kwon, Sung Min; Jo, Jeong-Wan; Jo, Chanho; Kim, Jaekyun; Kim, Yong-Hoon; Kim, Myung-Gil; Park, Sung Kyu
- 발행일
- 2020-09
- 유형
- Conference Paper
- 권
- 51
- 호
- 1
- 페이지
- 536 ~ 539