Contributions of Photon Reaction Processes to Displacement Damages with 7-MeV X-Ray Irradiation

초록

Displacement Damage (DD) in silicon has been widely studied for protons and neutrons, but X-rayinduced DD has rarely been addressed. Previous Gamma-Ray studies have primarily focused on Compton scattering, a single-photon process. In this work, we demonstrate that 7-MeV X-rays induce DDs primarily through pair production as well as Compton scattering. The trap densities in the PIN diode increased with repetitive photon irradiations. Geant4-simulated DD defects were approximately four times higher than those measured using irradiated PIN diodes, consistent with previous findings. These findings highlight highenergy X-ray irradiation as an alternative source for DD experiments with semiconductors. © 2026 IEEE.

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