Identification of Domain Boundary Defects in Crystalline Self-Assembled Monolayers

  • Seo, Eunsuk; 
  • Lee, Jeonghwi; 
  • Park, Namwoo; 
  • Min, Honggi; 
  • Park, Yeong Don; 
  • ... Lee, Hwa Sung
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초록

One of the major challenges to the fabrication of functionalized templates using self-assembled monolayers (SAMs) is the characterization of nanoscale defects, particularly SAM domain boundaries (DBs). In this study, an etchant was used to chemically amplify the DBs in a SAM by forming microscale pits in the underlying SiO2 layer. This approach revealed that the naturally occurring DBs acted as structural defects in the SAMs. The DB structures were characterized by systematically varying the octadecyltrichlorosilane (ODTS) monolayer domain size from the nanoscale to the microscale by varying the preparation temperature. These approaches showed that the SAM DBs, which were visualized as having round- and line-shaped nanoscale structures, provided potentially chemical and mechanical surface defect sites. Our principal findings open up exciting new possibilities for understanding the structural defects in SAMs on the molecular level and suggest an approach for optimizing the conditions used to generate defect-free SAM templates. Copyright © 2015 American Scientific Publishers All rights reserved.

키워드

Alkyl chain array; Chemical amplification; Defect; Domain boundary; Octadecyltrichlorosilane; Self-assembled monolayer; INFRARED-SPECTROSCOPY; MONOLAYER FORMATION; FORCE MICROSCOPY; SURFACES; GROWTH; ALKYLTRICHLOROSILANES; MECHANISMS
제목
Identification of Domain Boundary Defects in Crystalline Self-Assembled Monolayers
저자
Seo, Eunsuk; Lee, Jeonghwi; Park, Namwoo; Min, Honggi; Park, Yeong Don; Lee, Hwa Sung
DOI
10.1166/jnn.2015.10300
발행일
2015-08
저널명
Journal of Nanoscience and Nanotechnology
권
15
호
8
페이지
6001 ~ 6006