Reduced distributions of the set current and the voltage of unipolar resistance switching in a current-biased set process

  • Na, Sang-Chul; 
  • Chun, Min Chul; 
  • Jang, Gyuyeon; 
  • Shin, Hyejin; 
  • Kwon, Young-Sun; 
  • ... Kang, Bo Soo; 
  • 외 3명
Citations

WEB OF SCIENCE

1
Citations

SCOPUS

4

초록

The set process in a unipolar resistance switching Pt/NiO/Pt thin film was conducted in two different ways: the current-biased set process (current sweep mode) and the voltage-biased set process (voltage sweep mode). In the current-biased set process, a compliance current setting was not necessary for continuing stable resistance switching. The resistance of the low resistance state, the reset and the set switching parameters were compared in both modes of the set processes. The distributions of the set parameters were found to be effectively reduced in the current-biased set process. These intriguing properties can be attributed to the prevention of an overshoot current during the set transition.

키워드

Unipolar resistance switching; Current-biased set process; NiO thin film; RESISTIVE MEMORY; HIGH-DENSITY; FILMS; LAYER
제목
Reduced distributions of the set current and the voltage of unipolar resistance switching in a current-biased set process
저자
Na, Sang-Chul; Chun, Min Chul; Jang, Gyuyeon; Shin, Hyejin; Kwon, Young-Sun; Kang, Bo Soo; Lee, Keundong; Yoon, Chansoo; Park, Bae Ho
DOI
10.3938/jkps.68.1467
발행일
2016-06
유형
Article
저널명
Journal of the Korean Physical Society
권
68
호
12
페이지
1467 ~ 1471