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Efficiency droop in AlGaInP and GaInN light-emitting diodes
- Shim, Jong-In;
- Han, Dong-Pyo;
- Kim, Hyunsung;
- Shin, Dong-Soo;
- Lin, Guan-Bo;
- 외 6명
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76초록
At room temperature, AlGaInP pn-junction light-emitting diodes (LEDs) emitting at 630 nm do not exhibit an efficiency droop. However, upon cooling the AlGaInP LEDs to cryogenic temperatures, they show a pronounced efficiency droop. We attribute the efficiency droop in AlGaInP LEDs to electron-drift-induced reduction in injection efficiency (i.e., carrier leakage out of the active region) mediated by the asymmetry of the pn junction, specifically the disparity between electron and hole concentrations and mobilities, with the concentration disparity exacerbated at low temperatures. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3694044]
키워드
QUANTUM-WELL LASERS; Carrier concentration; Carrier mobility; Efficiency; Light emission
- 제목
- Efficiency droop in AlGaInP and GaInN light-emitting diodes
- 저자
- Shim, Jong-In; Han, Dong-Pyo; Kim, Hyunsung; Shin, Dong-Soo; Lin, Guan-Bo; Meyaard, David S.; Shan, Qifeng; Cho, Jaehee; Schubert, E. Fred; Shim, Hyunwook; Sone, Cheolsoo
- 발행일
- 2012-03
- 유형
- Article
- 권
- 100
- 호
- 11
- 페이지
- 1 ~ 5
- 언어
- ENG
- 출판사
- AMER INST PHYSICS
- 발행국가
- 미국
- 분량
- 5 페이지
- ISSN
- E 1077-3118
P 0003-6951