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Anisotropic dielectric properties in epitaxial Bi3.25La0.75Ti3O12 thin films along different crystal directions
- Lee, JS;
- Kang, BS;
- Lin, Y;
- Li, Y;
- Jia, QX
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WEB OF SCIENCE
15Citations
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18초록
Epitaxial (001)-oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown by pulsed-laser deposition on (001) LaAlO3 single-crystal substrates. The dielectric properties of the BLT films are highly anisotropic along different crystal directions. The dielectric constants are 358 and 160 along [100] and [1(1) over bar 0], respectively. Dielectric nonlinearity is also detected along these crystal directions. On the other hand, a much smaller dielectric constant and no detectable dielectric nonlinearity in a field range of 0-200 kV/cm are observed for a film along [001] where c-axis oriented SrRuO3 is used as the bottom electrode. (C) American Institute of Physics.
키워드
FERROELECTRIC PROPERTIES; ELECTRICAL-PROPERTIES; BI4-XLAXTI3O12; ORIENTATION; DEPENDENCE; ELECTRODES; DEPOSITION; BI4TI3O12; FERROELECTRIC PROPERTIES; ELECTRICAL-PROPERTIES; BI4-XLAXTI3O12; ORIENTATION; DEPENDENCE; ELECTRODES; DEPOSITION; BI4TI3O12
- 제목
- Anisotropic dielectric properties in epitaxial Bi3.25La0.75Ti3O12 thin films along different crystal directions
- 저자
- Lee, JS; Kang, BS; Lin, Y; Li, Y; Jia, QX
- 발행일
- 2004-09
- 유형
- Article
- 권
- 85
- 호
- 13
- 페이지
- 2586 ~ 2588
- 언어
- ENG
- 출판사
- AMER INST PHYSICS
- 발행국가
- 미국
- 분량
- 3 페이지
- ISSN
- E 1077-3118
P 0003-6951