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Improved Far-Field Angle in Narrow-Ridge High-Power Laser Diodes Using a Double Stripe Structure
- Kim, Daehong;
- Yang, Jung-Tack;
- Choi, Woo-Young;
- Kim, Younghyun
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0초록
We propose a novel double stripe structure for achieving a narrow far-field angle without significant output power loss in narrow-ridge high-power broad-area laser diodes. By introducing double SiO2 stripes on the top side of the laser diode, we effectively suppress high-order modes through mode weight engineering. Through self-consistent electro-thermal-optical simulations powered by LASTIP with the well-verified model from the reference, we comprehensively analyze and compare the characteristics of high-power broad-area laser diodes utilizing the loss tailoring technique that adopted the much simpler structure compared to prior study and our proposed structure. Our results demonstrate a significant reduction of approximately 36% in the far-field angle while maintaining slope efficiency. This approach shows promise for enhancing the performance of coupling efficiency between narrow-ridge high power laser diodes and fibers. Authors
키워드
- 제목
- Improved Far-Field Angle in Narrow-Ridge High-Power Laser Diodes Using a Double Stripe Structure
- 저자
- Kim, Daehong; Yang, Jung-Tack; Choi, Woo-Young; Kim, Younghyun
- 발행일
- 2023-12
- 유형
- Article
- 권
- 15
- 호
- 6
- 페이지
- 1 ~ 8
- 언어
- ENG
- 출판사
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가
- 미국
- 분량
- 8 페이지
- ISSN
- E 1943-0647
P 1943-0655