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A Broadband Doherty-Like Load-Modulated Balanced Amplifier With an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset Applications
- Yoon, Byeongcheol;
- Bae, Sooji;
- Lee, Seungju;
- Hwang, Sungwoon;
- Jeon, Jooyoung;
- ... Kim, Junghyun
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4초록
This letter presents a design methodology for implementing broadband load-modulated balanced amplifier (LMBA) for handset applications. It is evaluated which architecture, Doherty-like LMBA (DL-LMBA) or pseudo-Doherty LMBA (PD-LMBA), is more suitable for InGaP/GaAs HBT power amplifier (PA). The impedance transformation ratio (ITR) is optimized through an analysis of correlation between the coupler impedance (Z(0)) and matching network (MN). A prototype LMBA attains measured saturation power (P-SAT), collector efficiency (CE), and 6-dB output power back-off (OBO) CE of over 33.2 dBm, 45.2%, and 42.0%, respectively, in the range of 3.2-5.0 GHz. The LMBA is also evaluated by 5G NR FR1 100-MHz QPSK CP-OFDM with 9.5-dB peak-to-average power ratio (PAPR), achieving 26.6-dBm average output power (P-avg) with 37.7% average CE (CEavg) at an adjacent channel leakage ratio (ACLR) of -33 dBc.
키워드
- 제목
- A Broadband Doherty-Like Load-Modulated Balanced Amplifier With an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset Applications
- 저자
- Yoon, Byeongcheol; Bae, Sooji; Lee, Seungju; Hwang, Sungwoon; Jeon, Jooyoung; Kim, Junghyun
- 발행일
- 2025-06
- 유형
- Article
- 저널명
- IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS
- 권
- 35
- 호
- 6
- 페이지
- 848 ~ 851
- 언어
- ENG
- 출판사
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가
- 미국
- 분량
- 4 페이지
- ISSN
- E 2771-9588
P 2771-957X