Enhanced photoelectrochemical performance of indium doped wurtzite zinc oxide thin films for water splitting applications

초록

Doping of suitable element is believed to be an efficient strategy to improve the photoelectrochemical (PEC) performance of metal oxide semiconductors. The present report describes a simple drop-cast synthesis of wurtzite zinc oxide thin films with a hexagonal structure and their modification by adding an optimized amount of indium. UV-vis absorbance spectra, SEM, XRD were employed to determine their optical, morphological and structural properties, whereas the electrochemical impedance and linear sweep voltammetry were carried out to evaluate their efficacy towards photoelectrochemical water splitting applications. Although the pure ZnO film exhibits the water oxidation photocurrent of similar to 100 & micro;Acm(-2) under UV-vis illumination, the 35 % In-modified sample shows more than two times enhancement in the PEC performance.

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