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Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays
- Jin, Taewon;
- Kim, Sanghyeon;
- Han, Jae-Hoon;
- Ahn, Dae-Hwan;
- An, Seong Ui;
- ... Kim, Younghyun;
- 외 4명
WEB OF SCIENCE
14SCOPUS
18초록
We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors (TFTs) by introducing a non-volatile programmable ferroelectric material, HfZrO2 (HZO) into the gate stack of the TFT. We fabricated an amorphous ITZO TFT, ferroelectric TFTs (FeTFTs), and micro-LEDs and verified the feasibility of our proposed current-driving active matrix circuit. Importantly, we successfully present the programmed multi-level lighting of the micro-LED, utilizing partial polarization switching in the a-ITZO FeTFT. We expect that this approach will be highly promising for the next-generation display technology, replacing complicated threshold voltage compensation circuits with a simple a-ITZO FeTFT.
키워드
- 제목
- Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays
- 저자
- Jin, Taewon; Kim, Sanghyeon; Han, Jae-Hoon; Ahn, Dae-Hwan; An, Seong Ui; Noh, Tae Hyeon; Sun, Xinkai; Kim, Cheol Jun; Park, Juhyuk; Kim, Younghyun
- 발행일
- 2023-02
- 유형
- Article
- 저널명
- NANOSCALE ADVANCES
- 권
- 5
- 호
- 5
- 페이지
- 1 ~ 7
- 언어
- ENG
- 출판사
- ROYAL SOC CHEMISTRY
- 발행국가
- 영국
- 분량
- 7 페이지
- ISSN
- P 2516-0230