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Droop studies for high-performance InGaN blue light-emitting diodes
- Shim, Jong-In;
- Kim, Hyunsung;
- Han, Dong-Pyo;
- Shin, Dong-Soo
Citations
SCOPUS
1초록
An origin of the efficiency droop has been suggested as the saturation of the radiative recombination rate in InGaN quantum well at low current and subsequent increase in the nonradiative recombination rates at high current. © 2013 IEEE.
키워드
Blue light-emitting; Efficiency droops; High currents; InGaN quantum wells; Low currents; Nonradiative recombination rates; Radiative recombination rate; Light emitting diodes; Quantum well lasers
- 제목
- Droop studies for high-performance InGaN blue light-emitting diodes
- 저자
- Shim, Jong-In; Kim, Hyunsung; Han, Dong-Pyo; Shin, Dong-Soo
- 발행일
- 2013-07
- 유형
- Conference Paper
- 저널명
- Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
- 페이지
- 1 ~ 2
- 언어
- ENG
- 출판사
- IEEE
- 발행국가
- 미국
- 분량
- 2 페이지