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Techniques for optoelectronic performance evaluation in InGaN-based light-emitting diodes (LEDs)
- Shim, Jong In;
- Shin, Dong Soo
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0초록
To understand how each experimental parameter influences optoelectronic performances of InGaN-based LEDs, a method of systematic analysis that assesses the interrelations independently and quantitatively is absolutely necessary. Here, we introduce various characterization techniques to clarify the performance of LEDs and hidden severity of the detrimental effects, starting from the simple I-V measurement to more sophisticated temperature-dependent, spectroscopic, and LED efficiency measurements. © 2015 The Japan Society of Applied Physics.
키워드
Capacitance-voltage characteristics; Light emitting diodes; Photoconductivity; Power generation; Quantum well devices; Temperature measurement; Voltage measurement; Capacitance; Photoconductivity; Power generation; Semiconductor quantum wells; Temperature measurement; Voltage measurement; Capacitance voltage characteristic; Characterization techniques; Experimental parameters; I-V measurements; LED efficiencies; Quantum well device; Systematic analysis; Temperature dependent; Light emitting diodes
- 제목
- Techniques for optoelectronic performance evaluation in InGaN-based light-emitting diodes (LEDs)
- 저자
- Shim, Jong In; Shin, Dong Soo
- 발행일
- 2016-02
- 유형
- Conference Paper
- 저널명
- 2015 20TH MICROOPTICS CONFERENCE (MOC)
- 페이지
- 1 ~ 2
- 언어
- ENG
- 출판사
- IEEE
- 발행국가
- 미국
- 분량
- 2 페이지