Fabrication and characterization of Cu/a-Si/Si resistive switching memory cell

초록

We prepared amorphous silicon (a-Si) based memrisitive device structures. Copper (Cu) layers and heavy-doped p-type silicon substrates were used as top and bottom electrodes, respectively. The Cu/a-Si/Si structures, with active device diameter ranging from 5 to 20 micron, exhibited bipolar resistive switching (RS) behaviors. Electrical characterizations showed that compliance current and device area were important factors affecting repetitive RS behaviors. The repetitive resistance switching over 100 times was observed. The Cu/a-Si/Si structures have advantages over other material systems, since all the constituent materials and processing techniques are compatible with mass-production-level fabrication technology.