Highly area-selective atomic layer deposition of device-quality Hf1-xZrxO2 thin films through catalytic local activation

초록

Area-selective atomic layer deposition (AS-ALD) has garnered significant attention as a promising bottom-up patterning process for sub-10 nm scale technology, offering unmatched atomic-scale precision and pattern alignment capabilities in 3D nanofabrication. In this study, we present a groundbreaking methodology for achieving highly selective deposition of Hf1-xZrxO2 (HZO) thin films through catalytic local activation on noble metal surfaces (Ru and Pt) and TiN surfaces, without the need for surface inhibitory materials. To achieve inherent selectivity on metal surfaces, we employ O2 gas as a mildly oxidizing reactant and utilize cyclopentadienyl-tris(dimethylamido)-hafnium(zirconium) [Hf(Zr)Cp(NMe2)3] precursors, which require strong oxidizing agents, for HZO film formation. By catalytically dissociating O2 molecules, we successfully achieved area-selective deposition of HZO films greater than ∼7 nm on both blanket Ru versus Si substrates and Pt/Si-patterned substrates. Furthermore, we demonstrate the selective deposition of antiferroelectric HZO thin films with high dielectric constants of 34 and 31 on Ru and TiN substrates, respectively, using the inherent AS-ALD method combined with post-ozone treatment. Importantly, this catalytic local activation approach for achieving inherent deposition selectivity expands the potential utility of 3D bottom-up nanopatterning processes in next-generation nanoelectronic applications. © 2024 Elsevier B.V.

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