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Mechanism of the reset process in bipolar-resistance-switching Ta/TaOx/Pt capacitors based on observation of the capacitance and resistance
- Na, Sang-Chul;
- Kim, Jae-Jun;
- Chun, Min Chul;
- Jin, Da Hee;
- Ahn, Seung-Eon;
- ... Kang, Bo Soo
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The capacitance (C) and the resistance (R) were measured at various states as the reset process progressed in bipolar-resistance-switching Ta/TaOx/Pt thin film capacitors. The reset process was found to undergo three sequential stages where C and R showed different behavior: increasing C and constant R before an abrupt reset transition, the rapid increase of both C and R upon transition, and saturated C thereafter. These behaviors can be explained in terms of the annihilation of the oxygen vacancies followed by rupture of the conducting channels. (C) 2014 AIP Publishing LLC.
키워드
THIN-FILMS; MEMORY; IMPEDANCE SPECTROSCOPY; IMPEDANCE SPECTROSCOPY; THIN-FILMS; MEMORY
- 제목
- Mechanism of the reset process in bipolar-resistance-switching Ta/TaOx/Pt capacitors based on observation of the capacitance and resistance
- 저자
- Na, Sang-Chul; Kim, Jae-Jun; Chun, Min Chul; Jin, Da Hee; Ahn, Seung-Eon; Kang, Bo Soo
- 발행일
- 2014-03
- 유형
- Article
- 권
- 104
- 호
- 12
- 페이지
- 1 ~ 5
- 언어
- ENG
- 출판사
- AMER INST PHYSICS
- 발행국가
- 미국
- 분량
- 5 페이지
- ISSN
- E 1077-3118
P 0003-6951