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Multilevel Programmable Oxide Diode for Cross-Point Memory by Electrical-Pulse-Induced Resistance Change
- Kim, Ki Hwan;
- Kang, Bo Soo;
- Lee, Myoung-Jae;
- Ahn, Seung-Eon;
- Lee, Chang Bum;
- 외 4명
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13Citations
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13초록
A multilevel one-time programmable (OTP) oxide diode for cross-point memory is introduced. The oxide diode is composed of a thin-film p-CuO/n-InZnOx (IZO). By applying negative electrical pulses, the p-CuO/n-IZO diode exhibited multilevel resistance states, and such characteristics of the p-CuO/n-IZO diode could be utilized as the cell of OTP cross-point memory. The resistance-change properties of the p-CuO/n-IZO diode originated possibly from a back-to-back diode phenomenon by oxygen ion migration in the IZO thin film.
키워드
Cross-point; diode; memory; oxide; lectric resistance; Oxygen; Thin film devices; Cross-point; Electrical pulse; Induced resistance; Ion migration; One-time programmables; Resistance state
- 제목
- Multilevel Programmable Oxide Diode for Cross-Point Memory by Electrical-Pulse-Induced Resistance Change
- 저자
- Kim, Ki Hwan; Kang, Bo Soo; Lee, Myoung-Jae; Ahn, Seung-Eon; Lee, Chang Bum; Stefanovich, Genrikh; Xianyu, Wen Xu; Kim, Chang Jung; Park, Youngsoo
- 발행일
- 2009-10
- 유형
- Article
- 권
- 30
- 호
- 10
- 페이지
- 1036 ~ 1038
- 언어
- ENG
- 출판사
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가
- 미국
- 분량
- 3 페이지
- ISSN
- E 1558-0563
P 0741-3106