Ultrafast biexciton spectroscopy in semiconductor quantum dots: evidence for early emergence of multiple-exciton generation

  • Choi, Younghwan; 
  • Sim, Sangwan; 
  • Lim, Seong Chu; 
  • Lee, Young Hee; 
  • Choi, Hyunyong
Citations

WEB OF SCIENCE

17
Citations

SCOPUS

18

초록

Understanding multiple-exciton generation (MEG) in quantum dots (QDs) requires in-depth measurements of transient exciton dynamics. Because MEG typically faces competing ultrafast energy-loss intra-band relaxation, it is of central importance to investigate the emerging time-scale of the MEG kinetics. Here, we present ultrafast spectroscopic measurements of the MEG in PbS QDs via probing the ground-state biexciton transients. Specifically, we directly compare the biexciton spectra with the single-exciton ones before and after the intra-band relaxation. Early emergence of MEG is evidenced by observing transient Stark shift and quasi-instantaneous linewidth broadening, both of which take place before the intra-band relaxation. Photon-density-dependent study shows that the broadened biexciton linewidth strongly depends on the MEG-induced extra-exciton generation. Long after the intra-band relaxation, the biexciton broadening is small and the single-exciton state filling is dominant.

키워드

CARRIER MULTIPLICATION YIELDS; RELAXATION DYNAMICS; OPTICAL NONLINEARITIES; SILICON NANOCRYSTALS; EFFICIENCY; PBSE; ENERGY; TRANSMISSION; ABSORPTION; PHOTON
제목
Ultrafast biexciton spectroscopy in semiconductor quantum dots: evidence for early emergence of multiple-exciton generation
저자
Choi, Younghwan; Sim, Sangwan; Lim, Seong Chu; Lee, Young Hee; Choi, Hyunyong
DOI
10.1038/srep03206
발행일
2013-11
유형
Article
저널명
Scientific Reports
권
3
페이지
1 ~ 6