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Conversion from unipolar to bipolar resistance switching by inserting Ta2O5 layer in Pt/TaOx/Pt cells
- Yoo, H. K.;
- Lee, S. B.;
- Lee, J. S.;
- Chang, S. H.;
- Yoon, M. J.;
- ... Kang, B. S.;
- 외 5명
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37초록
We observed unipolar resistance switching in Pt/TaOx/Pt cells. We could make the cell have the bipolar resistance switching by inserting a stoichiometric Ta2O5 layer between Pt and TaOx layers. Bipolar resistance switching in Pt/Ta2O5/TaOx/Pt cells occurred reliably without applying an external compliance current. With increase in the Ta2O5 layer thickness, the current value at the low-resistance state became decreased but the forming voltage became increased. We could explain these intriguing phenomena using the interface-modified random circuit breaker network model. (C) 2011 American Institute of Physics. [doi:10.1063/1.3587809]
키워드
Platinum; Tantalum oxides; Circuit breaker; Compliance current; Layer thickness; Low-resistance state; Network models; Resistance switching
- 제목
- Conversion from unipolar to bipolar resistance switching by inserting Ta2O5 layer in Pt/TaOx/Pt cells
- 저자
- Yoo, H. K.; Lee, S. B.; Lee, J. S.; Chang, S. H.; Yoon, M. J.; Kim, Y. S.; Kang, B. S.; Lee, M. -J.; Kim, C. J.; Kahng, B.; Noh, T. W.
- 발행일
- 2011-05
- 유형
- Article
- 권
- 98
- 호
- 18
- 페이지
- 1 ~ 4
- 언어
- ENG
- 출판사
- AMER INST PHYSICS
- 발행국가
- 미국
- 분량
- 4 페이지
- ISSN
- P 0003-6951