단결정과 다결정 GaN Nanowire의 저주파 노이즈 특성

초록

Noise in nanostructures is important problems its applications in electronic devices. So we investigated that low-frequency noise characteristics of GaN nanowire and made field effect transistors about single crystalline and poly crystalline GaN nanowire. 1/f noise and Generation-recombination (G-R) noise is observed at low frequency. Low frequency noise suppression is explained by the illumination changing the occupancy of traps responsible for noise.