Toward a planar black silicon technology for 50 mu m-thin crystalline silicon solar cells

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초록

Auger and surface recombinations are major drawbacks that deteriorate a photon-to-electron conversion efficiencies in nanostructured (NS) Si solar cells. As an alternative to conventional frontside nanostructuring, we report how backside nanostructuring is beneficial for carrier collection during photovoltaic operation that utilizes a 50-mu m-thin wafer. Ultrathin (4.3-nm-thin) zinc oxide was also effective for providing passivated tunneling contacts at the nanostructured backsides, which led to the enhancement of 24% in power conversion efficiency. (C) 2016 Optical Society of America

키워드

SURFACE PASSIVATION; REAR CONTACTS; NANOWIRES; ZNO; SURFACE PASSIVATION; NANOWIRES; CONTACTS
제목
Toward a planar black silicon technology for 50 mu m-thin crystalline silicon solar cells
저자
Song, Jae-Won; Nam, Yoon-Ho; Park, Min-Joon; Yoo, Bongyoung; Cho, Jun-Sik; Wehrspohn, Ralf B.; Lee, Jung-Ho
DOI
10.1364/OE.24.0A1224
발행일
2016-09
유형
Article
저널명
Optics Express
권
24
호
18
페이지
A1224 ~ A1233