Electrodeposition of Ru on Nanoscale Trench Patterns

  • Kim, Youjung; 
  • Lee, Jinhyun; 
  • Seo, Jungyoon; 
  • Han, Haneul; 
  • Hwang, Inseong; 
  • ... Yoo, Bong Young; 
  • 외 1명
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초록

Ru deposition in advanced technology nodes can improve performance by providing low resistance in nanoscale features. In this study, we reported the electrochemical reactions of Ru3+ on an Ru surface using multi-cyclic voltammetry (CV) and behavior of additives during Ru electrodeposition using linear sweep voltammetry (LSV) and potentiostatic measurements. Disodium 3,3'-dithiobis(1-propanesulfonate) (SPS), polyvinylpyrrolidone (PVP), and a bromide ion (Br-) were added for bottom-up filling. We investigated the suppression behavior of PVP. The current density and the onset potential of suppressor breakdown were affected by the suppressor concentration. PVP interacted synergistically with Br- and showed additional suppression. PVP formed a suppressing layer with Br- after formation of a bromide layer. SPS could reduce roughness during electrodeposition of Ru. Based on these results, nano-trenches were filled with Ru using the optimized additive condition.

키워드

Ru electrodeposition; advanced semiconductor; suppression; interaction between additives; nano-trench filling; ELECTROLESS DEPOSITION; CU ELECTRODEPOSITION; POLYETHYLENE-GLYCOL; MOLECULAR-WEIGHT; COPPER; ADSORPTION; PEG; PPG; POLYVINYLPYRROLIDONE; ACCELERATION
제목
Electrodeposition of Ru on Nanoscale Trench Patterns
저자
Kim, Youjung; Lee, Jinhyun; Seo, Jungyoon; Han, Haneul; Hwang, Inseong; Yoon, Sanghwa; Yoo, Bong Young
DOI
10.1149/2162-8777/ad4677
발행일
2024-05
유형
Article
저널명
ECS Journal of Solid State Science and Technology
권
13
호
5
페이지
1 ~ 8