Cu to Cu direct bonding with optimized self-annealing behavior of the electroplated copper

초록

Cu to Cu direct bonding at low temperature has required the driving force of the Cu films to self-diffuse each other. In this study, high defect density Cu was optimized with a mechanical property of the self-annealing phenomena. Furthermore, the mechanism of the defect generation was studied with electrochemical analysis. Based on the analytical study, Cu to Cu bonding with the high defect density Cu, which had high tensile strength, was successfully conducted at 250°C bonding temperature. © 2022 IEEE.

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