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안지훈 프로필 사진

안지훈

Ahn, Ji Hoon

ERICA 첨단융합대학

ERICA 신소재·반도체공학전공

연도별 연구 활동 현황

전체 209건 중 111번부터 120번까지의 결과를 표시합니다.

2022

Conference

Low Temperature Growth of 2D MoS2 Thin Films by Plasma-enhanced Atomic Layer Deposition Using a Novel Precursor

Conference

Improvement of Energy Storage Performance of the Al-doped ZrO2 with Anti-ferroelectricity for Electrostatic capacitors

Conference

Effect of Yttrium Doping on Ferroelectricity of As-grown Hf1-xZrxO2 Thin Films via Atomic Layer Deposition

Article

Rhenium oxide/sulfide binary phase flakes decorated on nanofiber support for enhanced activation of electrochemical conversion reactions

Article

유리 기판에서 RF 마그네트론 스퍼터링법으로 증착한 비정질 투명전극 스트론튬 루세네이트 박막 두께에 따른 광학 및 전기적 특성

Article

Effects of Zr content and annealing on ferroelectricity of as-grown crystalline Hf1-xZrxO2 thin films using Hf[Cp(NMe2)(3)] and Zr[Cp(NMe2)(3)] precursors via atomic layer deposition

Article

Equivalent oxide thickness scalability of Zr-rich ZrHfO2 thin films by Al-doping

Article

Highly Stable Artificial Synapses Based on Ferroelectric Tunnel Junctions for Neuromorphic Computing Applications

Article

Advanced Atomic Layer Deposition: Ultrathin and Continuous Metal Thin Film Growth and Work Function Control Using the Discrete Feeding Method

Conference

Effects of Zr content and annealing on ferroelectric of as-grown crystalline Hf1-xZrxO2 thin films using Hf[Cp(NMe2)3] and Zr[Cp(NMe2)3] precursors via atomic layer deposition

상세 보기

안지훈

자료유형

발행연도

키워드

언어

Low Temperature Growth of 2D MoS2 Thin Films by Plasma-enhanced Atomic Layer Deposition Using a Novel Precursor

Improvement of Energy Storage Performance of the Al-doped ZrO2 with Anti-ferroelectricity for Electrostatic capacitors

Effect of Yttrium Doping on Ferroelectricity of As-grown Hf1-xZrxO2 Thin Films via Atomic Layer Deposition

Rhenium oxide/sulfide binary phase flakes decorated on nanofiber support for enhanced activation of electrochemical conversion reactions

유리 기판에서 RF 마그네트론 스퍼터링법으로 증착한 비정질 투명전극 스트론튬 루세네이트 박막 두께에 따른 광학 및 전기적 특성

Effects of Zr content and annealing on ferroelectricity of as-grown crystalline Hf1-xZrxO2 thin films using Hf[Cp(NMe2)(3)] and Zr[Cp(NMe2)(3)] precursors via atomic layer deposition

Equivalent oxide thickness scalability of Zr-rich ZrHfO2 thin films by Al-doping

Highly Stable Artificial Synapses Based on Ferroelectric Tunnel Junctions for Neuromorphic Computing Applications

Advanced Atomic Layer Deposition: Ultrathin and Continuous Metal Thin Film Growth and Work Function Control Using the Discrete Feeding Method

Effects of Zr content and annealing on ferroelectric of as-grown crystalline Hf1-xZrxO2 thin films using Hf[Cp(NMe2)3] and Zr[Cp(NMe2)3] precursors via atomic layer deposition